Method for making a tungsten plug of a semiconductor device

Details Method for making a tungsten plug of a semiconductor device Method for making a tungsten plug of a semiconductor device

1993-10-27

1995-10-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

427 99, 427253, H01L 2144, H01L 21285

Patent

active

054628903

ABSTRACT:
A method for making a tungsten plug of a semiconductor device is disclosed.
The method comprises the steps of: applying an etching process to a predetermined region of an insulating film formed a conductive layer to form a contact hole, said conductive layer being exposed at the predetermined region; adding a reactive gas containing tungsten metal ions into hydrogen radical plasma to form a tungsten thin film over said insulating film and said exposed conductive layer, said tungsten thin film having a good adhesiveness to said insulating film and a very thin thickness; depositing a blanket tungsten thin film in a predetermined thickness on the resulting structure; applying an etching process to said blanket tungsten thin film and subsequently to said tungsten thin film to expose the upper surface of said insulating film.
The tungsten plug formed in accordance with the present invention contains no key holes therein since the tungsten thin film is formed in a uniform thickness. In addition, absence key hole in the tungsten plug allows the etch back process for blanket tungsten to be easily controlled. Accordingly, the high production yield and the high reliability of semiconductor device are accomplished by the inventive method.

REFERENCES:
patent: 4777061 (1988-11-01), Wu et al.
patent: 5028565 (1991-07-01), Chang et al.
C. C. Tang, et al. "Plasma-Enhanced Deposition of Tungsten, Molybdenum, and Tungsten Silicide Films" Solid State Tech. Mar. 1983 pp. 125-128.
A. J. P. Van Maaren et al. "Tungsten Deposition on GaAs using WF and Atomic Hydrogen" J. Appl. Phys. 73(4) 15 Feb. 1993.

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