Method of fabricating defect-free silicon on an insulating subst

Details Method of fabricating defect-free silicon on an insulating subst Method of fabricating defect-free silicon on an insulating subst

1994-04-11

1995-10-31

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 84, 437 86, 437131, H01L 21265

Patent

active

054628830

ABSTRACT:
A method for fabricating silicon on insulator structures having a dislocation free silicon layer. The method utilizes low temperature UHVCVD to deposit a very heavily doped etch stop layer having a very steep doping profile onto a substrate and a lightly doped active layer onto the etch stop layer. An insulator is formed on the active layer and a carrier wafer is formed on the insulator layer. The original substrate is removed in a first etch and the etch stop layer is removed in a second etch resulting in a thin, uniform active layer. In one embodiment, a small percentage of germanium is added to the etch stop layer to produce a defect free epitaxial active layer.

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