Light emitting transistor array

Details Light emitting transistor array Light emitting transistor array

1982-04-19

1984-09-25

Edlow, Martin H.

Electric lamp and discharge devices

With temperature modifier

For lead-in-seal or stem protection

357 30, 357 32, 357 55, 313499, 313500, H01L 3300, H01L 2714, H01L 3100

Patent

active

044738340

ABSTRACT:
A light emitting bipolar transistor, adapted to produce light from cathodoluminescence, upon being biased into conduction, the light emitting bipolar transistor being formed on the top surface of a relatively flat semiconductor substrate and having active regions comprising: a collector region, and an emitter region, the collector and emitter regions being of a first conductivity type, and an extended base region of a second conductivity type, the extended base region being interposed between the collector and the emitter regions, and the base region having a coatable surface, a phosphor coating, the phosphor coating covering the base region coatable surface, and respective connections to the collector emitter and base regions; whereby, biasing the transistor into conduction produces an electric field in the base region, the electric field in the base field inducing electrons in the base region to increase energy to a high energy level and to drift, some drifting high energy electrons being scattered into the phosphor coating, thereby impacting the phosphor and producing light by cathodoluminescence.

REFERENCES:
patent: 3270235 (1961-12-01), Loebner
patent: 3319068 (1967-05-01), Beale et al.
patent: 3355636 (1967-11-01), Becke
patent: 3411952 (1968-11-01), Ross et al.
patent: 3508111 (1970-04-01), Davidson et al.
patent: 3774086 (1973-11-01), Vincent

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