Semiconductor integrated circuit with a response time compensate

Details Semiconductor integrated circuit with a response time compensate Semiconductor integrated circuit with a response time compensate

1981-10-16

1984-09-25

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307297, 307310, 307443, 307591, 330289, H03K 1714, H03K 17687

Patent

active

044737629

ABSTRACT:
A current-controlling MOS transistor is connected between a power source and an MOS circuit. A control voltage which has a level related to temperature is applied to the gate electrode of the control MOS transistor in order to compensate for current reduction at high temperatures due to the lowering of the mobility of minority carriers. The response time of the MOS circuit is made less dependent on temperature as a result of the current compensation.

REFERENCES:
patent: 3700934 (1972-10-01), Swain
patent: 3970875 (1976-07-01), Leehan
patent: 3987318 (1976-10-01), Meijer
patent: 4008406 (1977-02-01), Kawagoe
patent: 4020367 (1977-04-01), Yamashiro et al.
patent: 4293782 (1981-10-01), Tanaka et al.

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