Modulation doped radiation emitting semiconductor device

Details Modulation doped radiation emitting semiconductor device Modulation doped radiation emitting semiconductor device

1988-09-19

1990-02-27

Larkins, William D.

357 16, 357 22, H01L 3300

Patent

active

049050591

ABSTRACT:
A radiation-emitting semiconductor device (i.e. an LED or laser) emits radiation produced by radiative recombination of electrons from a field induced two-dimensional (2-d) electron gas with holes from a field induced two-dimensional (2-d) hole gas. The device uses a narrower band semiconductor active layer sandwiched between two layers of a wider band semiconductor. Top and bottom gates are used to induce the electron and hole 2-d gasses in the active layer. N+ and P+ regions are used to contact the 2-d electron and hole gasses to provide separate biasing. The thickness of the active layer is such that a field induced PN junction or PIN structure is formed at which radiative recombination can occur.

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patent: 4538165 (1985-08-01), Chang et al.
patent: 4546480 (1985-10-01), Burnham et al.
patent: 4603469 (1986-08-01), Armiento et al.
patent: 4616244 (1986-10-01), Yamazaki
patent: 4688061 (1987-08-01), Sasaki
Sze, Physics of Semiconductor Devices, 2nd Edition, 1981 (Wiley, NY), p. 848.

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