Heterojunction and process for fabricating same

Details Heterojunction and process for fabricating same Heterojunction and process for fabricating same

1975-08-14

1978-10-10

Larkins, William D.

357 30, 357 34, H01L 29267, H01L 29205

Patent

active

041199944

ABSTRACT:
Heterojunction devices including heterotransistors and heterodiodes are disclosed which exhibit improved high-frequency, efficiency, and power characteristics. The heterotransistor in one embodiment includes a wide-gap collector and in another embodiment includes a wide-gap isotype emitter having regions of different impurity doping levels. A heterodiode includes a similar wide-gap isotype emitter. Also disclosed are a heterojunction microwave diode and two types of heterojunction photocathodes. The microwave diode and one of the photocathodes are characterized by the occurrence of avalanche at the heterojunction.

REFERENCES:
patent: 3211970 (1965-10-01), Christian
patent: 3217214 (1965-11-01), Tummers
patent: 3249473 (1966-05-01), Holonyak
patent: 3466512 (1969-09-01), Seidel
patent: 3780359 (1973-12-01), Dumke et al.
Milnes et al., Heterojunctions and Metal-Semiconductor Junctions, (Academic Press, NY, 1972) pp. 7-9, 58-93, 201-280.

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