Method of eliminating p-type electrical activity and increasing

Details Method of eliminating p-type electrical activity and increasing Method of eliminating p-type electrical activity and increasing

1984-06-25

1986-05-13

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148175, 148187, 148DIG61, 148DIG77, 156624, H01L 21225, H01L 21263

Patent

active

045884471

ABSTRACT:
A silicon on sapphire (SOS) semiconductor structure may be processed to improve the electrical characteristics of a silicon film on a sapphire substrate by silicon-regrowth (SRG) techniques using oxidation to remove silicon from the outward surface of the silicon film. An epitaxial film on a sapphire substrate is implanted with silicon to amorphize the silicon film except for a thin seed layer on the outward surface of the silicon film. The silicon is recrystallized inwards using the seed layer as a seed for crystallization. The silicon film is oxidized to produce an oxide layer on the outward surface of the silicon film, the SOS structure may be heated to densify the oxide layer, and the oxide layer is etched away. This produces a silicon film with a reduced p-type electrical activity and improved crystalline quality surface so that the channel mobility is improved for semiconductor devices fabricated in the silicon film.

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