Method for producing group III nitride compound semiconductor su

Details Method for producing group III nitride compound semiconductor su Method for producing group III nitride compound semiconductor su

1996-02-07

1998-12-08

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 84, 437 86, 437133, 437944, 437974, 117915, 117952, 148DIG65, 148DIG113, 148DIG135, H01L 2120, H01L 2184

Patent

active

058468447

ABSTRACT:
A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.

REFERENCES:
patent: 4116751 (1978-09-01), Zaromb
patent: 4255208 (1981-03-01), Deutscher
patent: 4956335 (1990-09-01), Agostinelli et al.
patent: 5173451 (1992-12-01), Ota
patent: 5270294 (1993-12-01), Wu et al.
patent: 5278435 (1994-01-01), Van Hove
patent: 5280184 (1994-01-01), Jokerst et al.
patent: 5286335 (1994-02-01), Drabik
patent: 5391257 (1995-02-01), Sullivan et al.
Hackh's Chemical Dictionary, 4th Ed McGraw-Hill, NY, NY (1972) p. 735.
T. Detchprohm et al., Alloy Semic. Phys. & Electron. Symp. 1991, p. 121 "Crystal growth and properties of thick GaN layer on sapphire substrate", Jul. 1991.
Matsuoka et al, "Wide-Gap Semiconductor InGaN and InGaAlN Grown by Movpe", Journal of Electronic Materials, 21, 157-163, No. 2, 1992.
Detchprohm. et al. "Hydride Vapor Phase Epitaxial Growth of a High Quality GaN Film Using a ZnO Buffer Layer". Applied Physics. Letters. vol. 61 No. (22). Nov. 30, 1992 pp. 2688-2660.
Detchprohm. et al. "The Growth of Thick GaN Film on Sapphire Substrate by Using ZnO Buffer Layer". Journal of Crystal Growth 128. 1983. pp. 384-390.

Affiliated with

Also associated with

Rating

Method for producing group III nitride compound semiconductor su does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing group III nitride compound semiconductor su, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing group III nitride compound semiconductor su will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-176722