Photoemitter electron tube and photodetector

Details Photoemitter electron tube and photodetector Photoemitter electron tube and photodetector

1994-09-02

1997-01-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

313367, 313501, 313366, H01L 2714, H01L 2949, H01J 3100

Patent

active

055919863

ABSTRACT:
The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

REFERENCES:
patent: 3814993 (1974-06-01), Kennedy et al.
patent: 3849692 (1974-11-01), Beasley
patent: 3868523 (1975-02-01), Klopfer
patent: 3993926 (1976-11-01), Rauckhorst
patent: 4000503 (1976-12-01), Matare
patent: 4005465 (1977-01-01), Miller
patent: 4096511 (1978-06-01), Gurnell
patent: 4330797 (1982-05-01), Yokokawa
patent: 4871911 (1989-10-01), Van Gorkom
patent: 4906894 (1990-03-01), Miyawaki

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