Semiconductor pressure sensor with rated pressure specified for

Details Semiconductor pressure sensor with rated pressure specified for Semiconductor pressure sensor with rated pressure specified for

1995-09-19

1997-01-07

Chilcot, Richard

Measuring and testing

Fluid pressure gauge

Diaphragm

73721, G01L 906

Patent

active

055919170

ABSTRACT:
A semiconductor pressure sensor of the invention comprises a silicon plate having a crystalline plane of (100) or (110), and the silicon plate comprises a diaphragm having the crystalline plane of (100) or (110), and a base surrounding said diaphragm. Further, a plurality of piezoresistor elements formed on the diaphragm. An area S (m.sup.2) and a thickness t (m) of said diaphragm satisfies a following relation:

REFERENCES:
patent: 5231301 (1993-07-01), Peterson et al.
patent: 5289721 (1994-03-01), Tanizawa et al.
patent: 5412993 (1995-05-01), Ohtani
patent: 5471086 (1995-11-01), Ipposhi et al.

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