Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-08-16
1984-09-25
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 148187, H01L 2124
Patent
active
044728727
ABSTRACT:
A Schottky gate FET is fabricated by forming on a semiconductor substrate first and second stacks facing each other. Each stack is constructed by an ohmic electrode and a spacer film. On the substrate having stacks formed thereon an insulation layer is formed and is anisotropically etched in the direction of its thickness until the planar surface portions are exposed. As a result, portions of the insulation layer remain on opposing side walls of the stacks. After removing the spacer films to define stepped portions between each remaining portion and each electrode, a layer of a metallic material capable of forming a Schottky barrier with the substrate is formed. The remaining portions are removed to pattern the metallic material layer, thereby forming a Shottky gate electrode.
REFERENCES:
patent: 4266333 (1981-05-01), Reichert
patent: 4359816 (1982-11-01), Abbas et al.
patent: 4377899 (1983-03-01), Otani et al.
patent: 4426767 (1984-01-01), Swanson et al.
IEEE Trans. On Electron Devices, Vol. Ed.-29, No. 4, pp. 590-596, Apr. 1982, "Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology".
Hojo Akimichi
Mizoguchi Takamaro
Terada Toshiyuki
Toyoda Nobuyuki
Ozaki G.
Tokyo Shibaura Denki Kabushiki Kaisha
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