Process of producing a semiconductor device in which a height di

Details Process of producing a semiconductor device in which a height di Process of producing a semiconductor device in which a height di

1994-10-05

1997-01-07

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437919, H01L 2170, H01L 2700

Patent

active

055916597

ABSTRACT:
A semiconductor device comprising: a semiconductor substrate having a memory cell area containing a memory cell composed of a capacitor element, and a peripheral circuit area containing a peripheral circuit for controlling the memory cell; an insulating layer covering the peripheral circuit area and being absent in the memory cell area; protective layers effective in etching of the insulating layer and covering the top surfaces and side surfaces of word line conductor patters and bit line conductor patterns in the memory cell area; a contact hole having a circumference defined by one of the protective layers that covers side surfaces of the word line conductor patterns in the memory cell area, the contact hole extending to a diffused region in the semiconductor substrate; and a storage electrode of the capacitor element being connected to the diffused region through the contact hole. A process of producing the semiconductor device is also disclosed.

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