Process for manufacturing a vertical switched-emitter structure

Details Process for manufacturing a vertical switched-emitter structure Process for manufacturing a vertical switched-emitter structure

1995-02-28

1997-01-07

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 6, 437 59, 437 72, 437 68, 148DIG126, H01L 21265

Patent

active

055916554

ABSTRACT:
A vertical switched-emitter device structure in which the body of vertical-current-flow MOS device is formed in a P-type surface epi region, and dielectric isolation laterally separates the body from the surface contact to the buried P-type base region.

REFERENCES:
patent: 4487639 (1984-12-01), Lam et al.
patent: 4868626 (1989-09-01), Nakazato et al.
patent: 4881119 (1989-11-01), Paxman et al.
patent: 4935799 (1990-06-01), Mori et al.
patent: 5118635 (1992-06-01), Frisina
patent: 5247200 (1993-09-01), Momose et al.
patent: 5380670 (1995-01-01), Hagino
patent: 5424231 (1995-06-01), Yang
Richard A. Blanchard, "A Power Transistor with an Integrated Thermal Feedback Mechanism", Massachusetts Institute of Technology, Jul. 1970, Masters Dissertation.

Affiliated with

Also associated with

Rating

Process for manufacturing a vertical switched-emitter structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing a vertical switched-emitter structure , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing a vertical switched-emitter structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1763751