Method of manufacturing a semiconductor device and a resist comp

Details Method of manufacturing a semiconductor device and a resist comp Method of manufacturing a semiconductor device and a resist comp

1994-10-13

1997-01-07

Thomas, Tom

Fishing, trapping, and vermin destroying

437229, H01L 21266

Patent

active

055916546

ABSTRACT:
In a method of forming a buried impurity layer at a deep position of a semiconductor substrate, the resist configuration is prevented from sagging. A resist film having a film thickness of at least 3 .mu.m is formed on a semiconductor substrate. The resist film is exposed selectively to form an image. After exposure and before developing, the resist film is baked at the temperature of 110.degree.-130.degree. C. The resist film is developed and rinsed to form a resist pattern. The generated resist pattern is baked at a temperature of 100.degree. C.-130.degree. C. Using the resist pattern as a mask, impurity ions are implanted at high energy to the main surface of the semiconductor substrate to form a buried impurity layer at a deep position of the semiconductor substrate. Then, the resist pattern is removed.

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