Coherent light generators – Particular active media – Semiconductor
Patent
1992-03-13
1993-11-02
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 48, 372 49, 257 80, 257 85, H01S 319
Patent
active
052589919
ABSTRACT:
A monolithic laser diode and monitor photodetector is disclosed wherein the photodetector is placed at a tilt angle .chi., within a predetermined range of tilt angles, with respect to the laser diode back facet. The predetermined range of tilt angles is selected according to the thickness and refractive index of the dielectric coating so as to reduce the susceptibility of the photodetector performance to variations in the dielectric coating deposited simultaneously on the output facet of the laser diode and the light collection surface of the photodetector and to significantly reduce the amount of the optical power reflected from the light collection surface of the photodetector onto the laser diode back facet.
REFERENCES:
patent: 4470143 (1984-09-01), Kitamura et al.
patent: 4794609 (1988-12-01), Hara et al.
patent: 5032879 (1991-07-01), Buchmann et al.
patent: 5101246 (1992-03-01), Onodera
"GaAs:GaAlAs Ridge Waveguide Lasers and Their Monolithic Integration Using the Ion Beam Etching Process", by N. Bouadma et al (IEEE Journal of Quantum Electronics, vol. 25, pp. 2219-2228, Nov., 1989), discussed on p. 2 of the specification.
"An Integrated AlGaAs Two-Beam Laser Diode-Photodiode Array Fabricated with Reactive Ion Beam Etching", by M. Uchida et al (Electronics and Communications in Japan, part 2, vol. 72, pp. 33-43, 1989), discussed on p. 2 of the specification.
"Full-Wafer Technology-A New Approach to Large-Scale Laser Fabrication and Integration", by P. Vettiger et al (IEEE Journal of Quantum Electronics, vol. 27, pp. 1319-1330, Jun., 1991), discussed on p. 3 of the specification.
Eastman Kodak Company
Epps Georgia Y.
Owens Raymond L.
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