Single-ended complementary MOSFET sense amplifier

Details Single-ended complementary MOSFET sense amplifier Single-ended complementary MOSFET sense amplifier

1991-10-16

1993-07-20

Ng, Jin F.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307263, 3072968, H03F 345, H03K 512, H03K 301

Patent

active

052296660

ABSTRACT:
A single-ended complementary MOSFET sense amplifier having improved immunity from trip current variations, ground bounce and noise with minimal switching speed degradation includes complementary MOSFET amplifiers and a reference-controlled output amplifier comprising a voltage reference-controlled inverter. Complementary MOSFETs exclusively are used to avoid nonuniform depletion doping effects of NMOS depletion mode FETs. The input stage is designed to require a higher bit line signal voltage amplitude for higher noise immunity. The output stage is a single-ended voltage reference-controlled inverter with reduced sensitivity to CMOS process-induced MOSFET performance variations, and which has a higher input switching threshold for enhanced ground bounce immunity. In a preferred embodiment, the input stage provides voltage level shifting for increasing the dynamic range of the signal driving the output stage, thereby maintaining high switching speed.

REFERENCES:
patent: 4471242 (1984-09-01), Noufer et al.
patent: 4763026 (1988-08-01), Tsen et al.
patent: 4823031 (1989-04-01), Kadakia
patent: 4918341 (1990-04-01), Galbraith et al.
patent: 4929853 (1990-05-01), Kim et al.
patent: 5013943 (1991-05-01), Hirose

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