Charge transfer and/or amplifying device of low noise to detect

Details Charge transfer and/or amplifying device of low noise to detect Charge transfer and/or amplifying device of low noise to detect

1991-10-09

1993-07-20

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257224, 257262, 377 60, H01L 29796, E11C 1928

Patent

active

052296300

ABSTRACT:
A charge transfer and/or amplifying device includes a surface channel region of opposite conductivity type formed on the surface of a charge transfer buried channel region, a junction gate type field effect transistor formed of source and drain regions separated from each other by the buried channel region and the surface channel region and an insulated gate electrode formed on the surface channel region, wherein the gate electrode and the source region of the junction gate type field effect transistor are electrically coupled to thereby enhance a conversion efficiency.

REFERENCES:
patent: 3918070 (1975-11-01), Shannon
patent: 4074302 (1978-02-01), Brewer
patent: 4672645 (1987-06-01), Bluzer et al.
patent: 4984045 (1991-01-01), Matsunaga

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