Process for the preparation of metal nitride coatings from singl

Coating processes – Coating by vapor – gas – or smoke

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4271261, 427314, C23C 1600

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active

055914837

ABSTRACT:
Metal nitride coatings are deposited effectively by the decomposition of single source metal imido-amidoamine precursors perpared by the reaction of a pentavalent metal halide with a primary amine or hydrazine. With hydrazine-derived precursors, TaN coatings may be deposited at temperatures as low as 400 degrees Celcius or lower.

REFERENCES:
patent: 5194642 (1993-03-01), Winter et al.
patent: 5344948 (1994-09-01), Verkade
patent: 5409735 (1995-04-01), Winter et al.
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"Chemical Vapor Deposition of Tantalum Nitride Films", Takahashi, et al, Journal of the Less-Common Metals, 52 (1977) pp. 29-36.
"Single-Source Precursors to Niobium Nitride and Tantalum Nitride Films", Winter, et al, Mat.Res.Soc.Symp.Proc., vol. 327 (1994) pp. 103-108.
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"[TiCl.sub.4 (NH.sub.3).sub.2 ]: An Improved Single-Source Precursor to Titanium Nitride Films", Winter, et al, Inorganic Chemistry, vol. 33, No. 6, 1994 pp. 1227-1229.

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