Semiconductor laser devices with a plurality of light emitting l

Details Semiconductor laser devices with a plurality of light emitting l Semiconductor laser devices with a plurality of light emitting l

1992-08-31

1993-06-29

Ullah, Akm E.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

052241149

ABSTRACT:
A semiconductor laser device usable as a tunable laser, optical amplifier, optical wavelength converter and the like includes a plurality of light emitting layers, a barrier layer formed between the light emitting layers, a pair of light-electron confinement layers for sandwiching the light emitting layers and the barrier layer. Band gaps of ground levels of the light emitting layers are different from each other, a band gap of the barrier layer is larger than those of the light emitting layers and band gaps of the light-electron confinement layers are different from each other. Further, the light emitting layers, the barrier layer and the light-electron confinement layers are formed such that, when carriers are injected into the light emitting layers, a carrier density of the light emitting layer having a larger band gap is made higher and a carrier density of the light emitting layer having a smaller band gap is made lower than at least one of cases where the barrier layer is omitted and where a pair of the light-electron confinement layers are symmetrically formed with respect to the light emitting layers.

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Applied Physics Letters, vol. 36, No. 6, Mar. 15th, 1980, pp. 441-443, Tsang, W. T., "CW Multiwavelength Transverse-Junction-Stripe Lasers Grown By Molecular Beam Epitaxy Operating Predominantly In Single-Longitudinal Modes".

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