Thin-film transistor and method of making same

Details Thin-film transistor and method of making same Thin-film transistor and method of making same

1997-08-27

1999-05-18

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 61, 257 72, 257350, H01L29/04;31/036;31/0376

Patent

active

059052740

ABSTRACT:
A thin-film transistor includes a substrate and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by about 1 to 4 .mu.m. A method of making such a thin film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layer directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

REFERENCES:
patent: 5036370 (1991-07-01), Miyago et al.
patent: 5132745 (1992-07-01), Kwasnick et al.
patent: 5156986 (1992-10-01), Wei et al.
patent: 5428250 (1995-06-01), Ikeda et al.
"Low Cost, High Display Quality TFT-LCD Process", Society for Information Display, EuroDisplay 96, Proceedings of the 16th International Display Research Conference, Oct. 1, 1996, 591-594.
"Hilllock-Free A1-Gate Materials Using Stress-Absorbing Buffer Layer for Large Area AMLCDs" Society for Information Display 96 Digest, pp. 341-344, 1996.

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