Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-12-22

1991-10-01

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

050540319

ABSTRACT:
A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.

REFERENCES:
Patent Abstracts of Japan, vol. 10, No. 201 (E-419) (2257), Jul. 15th 1986, Kuniaki Itwamoto.
Electronics Letter, vol. 22, No. 4, Feb. 1986, pp. 217-218, T. Murakami et al: "High-power AlGaAs Laser with a Thin Tapered-Thickness Active Layer".
H. Matsubara et al., Mitsubhishi Denki Gihou, vol. 62, No. 7, pp. 566-569, 7-1988.

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