Method of forming a gate insulating film involving a step of cle

Details Method of forming a gate insulating film involving a step of cle Method of forming a gate insulating film involving a step of cle

1991-08-13

1993-07-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437946, 134 3, 134 254, 134 28, H01L 21306, B08B 308

Patent

active

052293343

ABSTRACT:
A method of producing a semiconductor device which comprises; a first cleaning step of cleaning the surface of Si of a semiconductor device having an Si base or an Si thin film as a substrate (1) by using an APM solution; a second cleaning step of cleaning the surface of Si by using a dilute HF solution to thereby remove the uppermost surface layer (3) of a naturally oxidized film (2) formed in the first cleaning step; and a step of forming a silicon oxide film by thermally oxidizing the cleaned surface of the naturally oxidized film (2).

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