Fishing – trapping – and vermin destroying
Patent
1992-02-25
1993-07-20
Kunemund, Robert
Fishing, trapping, and vermin destroying
156610, 156613, 156DIG73, 156DIG103, H01L 2102
Patent
active
052293327
ABSTRACT:
In one form of the invention, a method for the growth of an epitaxial insulatormetal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1.times.10.sup.-7 mbar, maintaining the semiconductor surface at a substantially fixed first temperature between approximately 25.degree. C. and 400.degree. C., depositing an epitaxial metal layer on the semiconductor surface, adjusting the semiconductor surface to a substantially fixed second temperature between approximately 25.degree. C. and 200.degree. C., starting a deposition of epitaxial CaF.sub.2 on the first metal layer, ramping the second temperature to a third substantially fixed temperature between 200.degree. C. and 500.degree. C. over a time period, maintaining the third temperature until the epitaxial CaF.sub.2 has deposited to a desired thickness, and stopping the deposition of epitaxial CaF.sub.2 on the first metal layer.
REFERENCES:
C.-C. Cho, et al., "Low Temperature Epitaxial Growth of Al on Si(111) and CaF.sub.2 (111) Using Molecular Beam Epitaxy", Mat. Res. Symp. Proc., pp. 87-92, vol. 221, presented (Apr. 1992.).
Isao Yamada, et al., "Metallization by Ionized Cluster Beam Deposition", IEEE Transactions on Electron Devices, pp. 1018-1025, vol. ED-34, No. 5, (May 1987).
Julia M. Phillips, et al., "Using Rapid Thermal Annealing to Improve Epitaxial CaF.sub.2 /CoSi.sub.2 /Si(111) Structures", Mat. Res. Soc. Sump. Proc., pp. 115-118, vol. 67, (1986.).
R. W. Fathauer, et al., "Heteroepitaxy of Insulator/Metal/Silicon Structures: CaF.sub.2 /NiSi.sub.2 /Si(111) and CaF.sub.2 /CoSi.sub.2 /Si(111)", Appl. Phys. Lett., pp. 64-66, 49(2), (Jul. 14, 1986.).
Julia M. Phillips, et al., "Growth of an Epitaxial Insulator-Metal-Semiconductor Structure on Si by Molecular Beam Epitaxy", Appl. Phys. Lett., pp. 463-465, 48 (7), (Feb. 17, 1986.)
Donaldson Richard L.
Garrett Felisa
Kesterson James C.
Kunemund Robert
Skrehot Michael K.
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