Method for forming an isolated film on a semiconductor device

Details Method for forming an isolated film on a semiconductor device Method for forming an isolated film on a semiconductor device

1992-01-16

1993-07-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 72, 437 63, 437 64, 148DIG50, H01L 2176

Patent

active

052293157

ABSTRACT:
The present invention relates to a method for forming an isolated film on a semiconductor device in the shape of a cylinder to shorten the heat treatment process and to prevent a micro-loading effect of filling of a field-isolated oxide film. The method comprises the step of forming a deep, narrow groove, then filling up the groove with an oxide film, and then oxidizing a polysilicon layer encircled by the groove to form an isolated film in the shape of a cylinder.

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patent: 5073813 (1991-12-01), Morita et al.
patent: 5089435 (1992-02-01), Akiyama
patent: 5094966 (1992-03-01), Yamazaki

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