Current sense amplifier circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307354, 307362, 307363, 307562, 365205, 365207, H03K 508, H03F 345

Patent

active

052586693

ABSTRACT:
Memory cells in the semiconductor memory section are supplied with a current from an N-channel transistor which is one of the components forming a current-mirror circuit through a column selector and also supplied with a current from another current passage formed by N-channel transistors connected in series between a power supply source and the column selector. The N-channel transistor is turned on for a predetermined short period of time in response to an externally supplied pulse only at the start of accessing to the memory cell. Thus, a parasitic capacitor coupled to a column line is charged quickly through two different current passages, whereby the time for accessing read-only memory cells is effectively shortened.

REFERENCES:
patent: 4962482 (1990-10-01), Jinbo
patent: 5012448 (1991-04-01), Matsuoka et al.
patent: 5056063 (1991-10-01), Santin et al.

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