Method for manufacturing a semiconductor device, including optic

Fishing – trapping – and vermin destroying

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437174, 437942, H01L 21326

Patent

active

052293041

ABSTRACT:
A method for manufacturing a semiconductor device which includes a step of evaluating the dopant profile, in at least the depth dimension, in a processed or partially processed wafer. The evaluation is performed nondestructively, by measuring a differential reflectivity spectrum of the doped portion of the wafer. The resulting spectrum can be related to the Fourier transform of the dopant profile in the depth dimension.

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R. S. Miranda, et al., "Use of time-resolved IR reflection and transmission as a probe of carrier dynamics in semiconductors", Optics Lett. 16, 1991, pp. 1859-1861.

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