Thin film capacitor and manufacturing method thereof

Details Thin film capacitor and manufacturing method thereof Thin film capacitor and manufacturing method thereof

1990-08-30

1991-10-01

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 357 51, H01G 410, H01G 700, H01L 2702

Patent

active

050539175

ABSTRACT:
This film capacitors in accordance with the present invention include a silicon electrode, a first electrode layer consisting of either one of titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and compounds thereby, formed on the silicon electrode, a second electrode layer formed on it consisting of platinum, palladium or rhodium, a dielectric layer formed on it consisting of an oxide ferroelectric substance such as BaTiO.sub.3 and a third electrode layer formed on top of it. As the first electrode layer, use may also be made of rhenium oxide, osmium oxide, rhodium oxide or iridium oxide.

REFERENCES:
patent: 4903110 (1990-02-01), Aono
patent: 4982309 (1991-01-01), Shepherd
IBM Technical Disclosure Bulletin 357-51 Nov. 1974, vol. 17, No. 6, pp. 1569-1570.
IBM Technical Disclosure Bulletin 357-51 Aug. 1980, vol. 23, No. 3, pp. 1058.
Isaac H. Pratt, "Characteristics of RF Sputtered Barium Titanate Thin Films", Proceedings of the IEEE, vol. 59, No. 10, Oct. 1971, pp. 1440-1447.
W. B. Pennebaker, "RF Sputtered Strontium Titanate Films", IBM J. Res. Develop., Nov. 1969, pp. 686-695.
Janda K. G. Panitz et al., "Radio-Frequency-Sputtered Tetragonal Barium Titanate Silicon," J. Vac. Sci. Technol., vol. 16, No. 2, Mar./Apr. 1979, pp. 315-318.

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