Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1991-12-20
1993-06-29
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257362, 257363, 257603, H01L 2906, H01L 2990
Patent
active
052237370
ABSTRACT:
A circuit for protection from overvoltages of an external electrical connection pad of a circuit integrated in an n type conductivity epitaxial layer formed on a monocrystal semiconductor substrate, comprises a lateral integrated transistor having an emitter connected to said pad, a collector connected to ground and a base connected to said pad across a resistor, and an integrated Zener diode functionally connected between the base and the collector of said transistor.
REFERENCES:
patent: 4897757 (1990-01-01), Tailliet et al.
patent: 5077591 (1991-12-01), Chen et al.
Patent Abstracts of Japan, vol. 13, No. 259, Jun. 15, 1989 #A 155017, Published Feb. 3, 1989 Whole document.
Munson Gene M.
SGS--Thomson Microelectronics S.r.l.
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