Electronic component, especially a permeable base transistor

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357 56, 357 20, H01L 2972

Patent

active

051228530

ABSTRACT:
An electronic component especially a permeable base transistor is provided as a composite of homoepitaxially grown layers so that space-charge zones defined by the permeable base are formed as pn-junctions between an n-conducting layer and a p-conducting layer.

REFERENCES:
patent: 4171995 (1979-10-01), Nishizawa et al.
patent: 4758534 (1988-07-01), Derkits, Jr. et al.
patent: 4866500 (1989-09-01), Nishizawa et al.
patent: 5016074 (1991-05-01), Sands

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