Trench JFET integrated circuit elements

Details Trench JFET integrated circuit elements Trench JFET integrated circuit elements

1991-05-02

1992-06-16

Mintel, William

357 32, 357 22, 357 51, H01L 2714

Patent

active

051228513

ABSTRACT:
A method and construction are disclosed to form a trench gate JFET transistor. The invention comprises forming a first trench in a semiconductor substrate, forming a gate channel about the trench and forming a conductive layer upon the surface of the gate channel. The conductive layer interfaces with the gate channel to form a p-n junction. Source and drain regions are formed adjacent to a trench and disposed in electrical contact with the gate channel. An integral capacitor may be added to the construction by forming a second trench, which extends through and excavates a portion of the first trench. The drain region is extended about the surface of the second trench to remain in electrical contact with the gate channel. A layer of insulating material is applied to the second trench, which is then filled with a body of conductive material. The conductive material is insulated from the conductive layer by the insulating layer.

REFERENCES:
patent: 4633086 (1986-12-01), Parrish
patent: 4684968 (1987-08-01), Ohta et al.

Affiliated with

Also associated with

Rating

Trench JFET integrated circuit elements does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench JFET integrated circuit elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench JFET integrated circuit elements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1757532