Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-10-15
1999-05-18
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117208, 117900, 117932, C30B15/20
Patent
active
059047682
ABSTRACT:
A process and apparatus for regulating the concentration and distribution of oxygen in a single crystal silicon rod pulled from a silicon melt, optionally doped with antimony or arsenic, in accordance with the Czochralski method wherein an atmosphere is maintained over the melt. In batch embodiments of the process, the gas pressure of the atmosphere over the melt is progressively increased to a value in excess of 100 torr as the fraction of silicon melt solidified increases. In continuous embodiments of the process, the gas pressure of the atmosphere over the melt is maintained at or near a constant value in excess of 100 torr. The process and apparatus are further characterized in that a controlled flow of inert gas is used to remove vapors and particulate away from the surface of the rod and melt, resulting in the production of a single crystal silicon rod having zero dislocations.
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Hiteshew Felisa
MEMC Electronic Materials , Inc.
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