Method of producing semiconductor substrate

Details Method of producing semiconductor substrate Method of producing semiconductor substrate

1992-01-14

1993-11-02

Fourson, George

Fishing, trapping, and vermin destroying

437 71, 437966, 148DIG116, H01L 2176

Patent

active

052583228

ABSTRACT:
A method of producing a semiconductor substrate, which comprises forming a monocrystalline silicon layer on a porous silicon substrate by epitaxial growth and applying an oxidation treatment to the porous silicon substrate and the monocrystalline silicon layer at least near the interface between the porous silicon substrate and the monocrystalline silicon layer.

REFERENCES:
patent: 5098850 (1992-03-01), Nishida et al.
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Unigami, "Formation of Mechanism of Porous Silicon Layer by Anodization in HF Solution." Jour. of the Electrochemical Soc. vol. 127, No. 2, Feb. 1980, pp. 476-482.
Imai, "A New Dielectric Isolation Method Using Porous Silicon." Solid-State Electronics, vol. 24, No. 2, Feb. 1981, pp. 159-164.
Holstrom and Chi, "Complete Dielectric Isolation by Highly Selective and Self-Stopping Formation of Oxidized Porous Silicon." Appl. Phys. Lett., vol. 42, No. 4, Feb. 13, 1983, pp. 386-388.
Takai and Itoh, "Porous Silicon Layers and its Oxide for the Silicon-on-Insulator Structure." Appl. Phys. Lett. Jul. 1, 1986, pp. 222-225.
Tsubouchi et al., "Oxidation of Silicon in High-Pressure Steam." Japanese Journal of Applied Physics, vol. 16, No. 5, May 1977, pp. 855-856.
"Single-Crystal Silicon On Non-Single-Crystal Insulators," edited by G. W. Cullen, Journal of Crystal Growth, vol. 63, No. 1, Oct. 1, 1983, pp. 429-590.

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