Method of manufacturing a MOS type field effect transistor using

Details Method of manufacturing a MOS type field effect transistor using Method of manufacturing a MOS type field effect transistor using

1991-08-20

1993-11-02

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 44, 257344, H01L 21336

Patent

active

052583198

ABSTRACT:
An MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) of the present invention comprises two source.multidot.drain impurity regions formed spaced apart from each other in a semiconductor substrate. At least a drain side of the two impurity regions has a so called LDD structure in which a region of higher concentration and a region of lower concentration are off set. A gate electrode having a rectangular cross section is formed on the semiconductor substrate between the source and drain with an insulating film interposed therebetween. The gate electrode fully covers the lower concentration region of the LDD structure directly therebelow. The position of the side surface of the gate electrode is approximately aligned with the end surface of the region of higher concentration. The impurity region of lower concentration of the LDD is formed by oblique ion implantation.

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