1988-01-20
1989-07-18
Edlow, Martin H.
357 4, 357 2, 357 61, H01L 2978
Patent
active
048497975
ABSTRACT:
In a thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the photoconductivity of the active layer is reduced by forming the active layer of amorphous silicon carbide (a-Si.sub.1-x C.sub.x) whose carbon content x is greater than 0.1.
REFERENCES:
patent: 3600218 (1971-08-01), Pennibaker
patent: 4642144 (1987-02-01), Tiedje
Aoki Shigeo
Ukai Yasuhiro
Edlow Martin H.
Hosiden Electronics Co. Ltd.
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