Multiple 3-dimensional semiconductor device processing method an

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Including adhesive bonding step

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438106, 438 26, H01L21/44;21/48;21/50

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active

059045027

ABSTRACT:
A method of making a multiple 3-dimensional semiconductor device substrate includes the steps of providing a plurality of devices each device including a semiconductor die and having a reference face requiring a subsequent face processing. The reference face of each of the plurality of devices is positioned upon a planar reference surface. The planar reference surface corresponds to a release layer having vacuum apertures disposed therein. The plurality of devices can be precisely aligned in a prescribed manner upon the release layer, wherein application of a vacuum source to the vacuum apertures holds the plurality of aligned devices at their respective reference faces upon the release layer. Molding compound is dispensed into gaps occurring between adjacent side faces of the plurality of devices other than the reference faces. Lastly, the molding compound is cured. A multiple 3-dimensional semiconductor device substrate is disclosed also.

REFERENCES:
patent: 4617160 (1986-10-01), Belanger et al.
patent: 4999311 (1991-03-01), Dzarnoski, Jr. et al.
patent: 5019946 (1991-05-01), Eichelberger et al.
patent: 5107586 (1992-04-01), Eichelberger et al.
patent: 5279991 (1994-01-01), Minahan et al.
patent: 5306670 (1994-04-01), Mowatt et al.
patent: 5478781 (1995-12-01), Bertin et al.
patent: 5506753 (1996-04-01), Bertin et al.
patent: 5547530 (1996-08-01), Nakamura et al.
patent: 5663104 (1997-09-01), Fukuyama
patent: 5688721 (1997-11-01), Johnson

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