Method of forming refractory metal film

Details Method of forming refractory metal film Method of forming refractory metal film

1992-05-18

1993-06-29

Maples, John S.

Fishing, trapping, and vermin destroying

437243, 437246, H01L 21441

Patent

active

052234550

ABSTRACT:
A method for forming a refractory metal film on a substrate utilizes a reduction reaction of the halides of the refractory metal with respect to monosilane, disilane, or the halides of monosilane and disilane to form the refractory metal film while suppressing the reaction by adding a hydrogen gas. As a result, the refractory metal film is formed with good quality at a high speed, or deposited selectively on the nitrides, etc., of metal.

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patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4699801 (1987-10-01), Ito et al.
patent: 5071788 (1991-12-01), Joshi
patent: 5108952 (1992-04-01), Matsuhashi
Smith, "CVD Tungsten Contact Plugs by in situ Deposition and Etchback", Multilevel Interconnect. Conf., Santa Clara, Calif., Jun. 25-26, 1985.

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