Method for producing a layered capacitor structure for a dynamic

Details Method for producing a layered capacitor structure for a dynamic Method for producing a layered capacitor structure for a dynamic

1991-07-18

1993-06-29

Chaddhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437 60, 437228, 437919, H01L 21265, H01L 2170

Patent

active

052234487

ABSTRACT:
An improved method and resulting structures for producing a layered capacitor structure of memory cell of a DRAM device wherein a doped polysilicon spacer operates as a dopant source for an overlying polysilicon layer on the vertical and sharply inclined surfaces.

REFERENCES:
patent: 4239559 (1980-12-01), Ito
patent: 4910566 (1990-03-01), Ema
patent: 4977102 (1990-12-01), Ema
patent: 5006481 (1991-04-01), Chan et al.
patent: 5068707 (1991-11-01), Pors et al.
patent: 5104821 (1992-04-01), Choi et al.

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