Internal reflector interferometric semiconductor laser device

Details Internal reflector interferometric semiconductor laser device Internal reflector interferometric semiconductor laser device

1986-06-25

1988-09-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, 372 92, H01S 319

Patent

active

047730765

ABSTRACT:
A semiconductor laser device in which a double-heterostructure multi-layered crystal containing an active layer for laser oscillation is formed on a single crystal substrate having a channel composed of alternate channel portions with different widths and lengths, resulting in a plurality of alternate optical waveguides in said active layer corresponding to said alternate channel portions, said optical waveguides being optically coupled therebetween but being electrically separated from each other.

REFERENCES:
patent: 4562569 (1985-12-01), Yariv et al.
patent: 4608697 (1986-08-01), Coldren
patent: 4679200 (1987-07-01), Matsui

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