Method for treating surface of silicon

Details Method for treating surface of silicon Method for treating surface of silicon

1990-03-23

1992-06-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 148DIG17, 156643, 156646, 427 36, 427 38, 427 39, H01L 2100, H01L 2102, H01L 21205

Patent

active

051224828

ABSTRACT:
In a method for treating the surface of either crystalline or amorphous silicon a silicon material is maintained in a non-oxidizing atmosphere with a reduced pressure, a gas selected from among hydrides of phosphorus, fluorides of phosphorus, hydrides of arsenic, fluorides of arsenic, hydrides of boron, fluorides of boron and fluorides of silicon is excited and the excited gas is supplied onto the surface of the silicon material for a prescribed period of time. During this period the temperature of the silicon material is maintained within a range higher than the temperature at which the molecules of the selected gas would, were the gas not excited, liquefy at the reduced pressure and deposit on the material and lower than the temperature at which the gas decomposes. The method enables the silicon material surface to be cleaned and/or protected by treatment at a relatively low temperature. The treatment has the effect of improving various electrical, chemical and physical characteristics of the surface of silicon material and as such improves the performance and characteristics of a device or integrated circuit including the silicon material.

REFERENCES:
patent: 4247859 (1981-01-01), Rai-Choudhury et al.
patent: 4329699 (1982-05-01), Ishihara et al.
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4745088 (1988-05-01), Inoue et al.
patent: 4840921 (1989-06-01), Matsumoto
patent: 4923828 (1990-05-01), Gluck et al.

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