Impurity diffusion method

Fishing – trapping – and vermin destroying

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437987, 437954, 148DIG35, H01L 21225

Patent

active

051224780

ABSTRACT:
A method for diffusing an impurity into a semiconductor includes producing a first semiconductor layer which does not include an element which alloy-reacts with the impurity on a surface of a compound semiconductor which includes a constitutional element that alloy-reacts with the impurity, covering the first semiconductor layer with a second layer including the impurity, and thereafter annealing to diffuse the impurity into the compound semiconductor.

REFERENCES:
patent: 4980313 (1990-12-01), Takahashi et al.
patent: 4987097 (1991-01-01), Nitta et al.
patent: 5023199 (1991-06-01), Murakami et al.

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