Semiconductor memory device with shift during write capability

Static information storage and retrieval – Plural shift register memory devices

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365219, 365220, G11C 1900, G11C 1928

Patent

active

047730455

ABSTRACT:
A semiconductor memory device including a RAM portion and a shift register for enabling parallel transfer of a one word line amount of data of the RAM portion between the RAM portion and the shift register. The shift register is divided into a plurality of shift register portions with serial input data being distributed alternately between the shift register portions by the operation of a multiplexer and serial output data being obtained by picking up data alternately from the shift register portions by the operation of another multiplexer. A transfer gate portion is inserted between the RAM portion and the shift register for carrying out parallel transfer, the transfer gate portion includes a plurality of groups of transfer gates for enabling selective connections of input and output terminals of each of the stages of the shift register portions with either of the adjacent odd numbered bit line and even numbered bit line of the RAM portion. The plurality of transfer gate groups are switched in correspondence with shift clock signals.

REFERENCES:
patent: 4151609 (1979-04-01), Moss
patent: 4281401 (1981-07-01), Redwine et al.
patent: 4321695 (1982-03-01), Redwine et al.
patent: 4330852 (1982-05-01), Redwine
patent: 4347587 (1982-08-01), Rao
patent: 4616343 (1986-10-01), Ogawa
Patent Abstracts of Japan, vol. 1, No. 50, May 16, 1977, p. 3343, JP-A-51 147 225.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device with shift during write capability does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with shift during write capability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with shift during write capability will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1753316

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.