Suscepter device for the preparation of a diamond film-coated bo

Coating apparatus – Gas or vapor deposition – Work support

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156612, 156613, 156614, 156DIG68, 423446, C23C 1600

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active

053042492

ABSTRACT:
In forming a diamond film on a surface of substrate by means of plasma method, there is employed in a plasma reacting chamber a supporting member having a top surface for placing the substrate so disposed as to be smaller than a bottom surface of the substrate and having engagement means for engaging with the substrate. When the substrate (particularly substrate for a cutting tool) placed on the top surface of the supporting member is brought into contact with plasma obtainable by exciting raw material gases, a diamond film is coated on the face, land and flank of the substrate for the cutting tool with a uniform film thickness.

REFERENCES:
patent: 4068814 (1978-01-01), Anthony et al.
patent: 4728389 (1988-03-01), Logar
patent: 5148714 (1992-09-01), McDiarmid
Abstract of Japanese Patent Reference No. 61-36200 dated Feb. 20, 1986.
Chemical & Engineering News, vol. 67, No. 20, May 15, 1989, pp. 24-39, P. K. Bachmann et al: "Emerging Technology of Diamond Thin Films".
Physical Review B, vol. 38, No. 6, Aug. 15, 1988, USA, pp. 4067-4084; K. Kobashi et al: "Synthesis of Diamonds by Use of Microwave Plasma Chemical-Vapor Deposition Morphology and Growth of Diamond Films".
Applied Physics Letters, vol. 52, No. 20, May 16, 1988, New-York, USA, pp. 1658-1660.; B. Singh et al: "Hollow Cathode Plasma Assisted Chemical Vapor Deposition of Diamond".
Journal Of Applied Physics, vol. 66, No. 10, Nov. 15, 1989, New York, USA, pp. 4676-4684, P. J. Kung et al: "Growth of Diamond Thin Films by Spiral Hollow Cathode Plasma-Assisted Chemical Vapor Deposition".
Patent Abstracts Of Japan, vol. 6, No. 63 (C-99) (941) Apr. 22, 1982, and JP-A-57 3 706 (Hitachi Kasei Kogyo K.K), Jan. 9, 1982.

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