Thin film FET doped with diffusion inhibitor

Details Thin film FET doped with diffusion inhibitor Thin film FET doped with diffusion inhibitor

1986-10-23

1988-09-20

James, Andrew J.

Fishing, trapping, and vermin destroying

357 63, 357 64, 357 59, 357 42, 437 21, 437 24, H01L 2978, H01L 29167, H01L 2904

Patent

active

047729279

ABSTRACT:
The present invention relates to a semiconductor device including a MOS transistor which is formed with a source region, a drain region and a channel region by the use of polycrystalline silicon, and a method of manufacturing the semiconductor device. Ions of carbon, oxygen or/and nitrogen are introduced into a polycrystalline silicon layer over the whole area thereof, and restrain conductive ions in the source and drain regions from diffusing into the channel region.

REFERENCES:
patent: 4380773 (1983-04-01), Goodman
patent: 4420870 (1983-12-01), Kimura
patent: 4689667 (1987-08-01), Aronowitz
Ng et al., IEEE Electron Device Letters, vol. EDL-2, No. 12, Dec. 1981, pp. 316-318.

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