Solid-state imaging device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

357 31, 357 24, 307311, H01L 2714

Patent

active

041480511

ABSTRACT:
In a solid-state imaging device wherein at least one pn-junction photodiode and photo-signal detecting means adjacent thereto are disposed in a surface portion of a semiconductor substrate of one conductivity type, a solid-state imaging device characterized in that at least one window region is disposed within a semiconductor region which constitutes said photodiode and which has the opposite conductivity type to that of said semiconductor substrate, said window region "hollowing" said semiconductor region up to the surface of said semiconductor substrate and being made of a part of said semiconductor substrate.

REFERENCES:
patent: 3676715 (1972-07-01), Brodyr
patent: 3983573 (1976-09-01), Ishihara
patent: 4012587 (1977-03-01), Ochi
patent: 4067046 (1978-01-01), Nakatani
patent: 4085456 (1978-04-01), Tompsett
patent: 4090212 (1978-05-01), Byatt

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