Long wavelength avalanche photodetector

Details Long wavelength avalanche photodetector Long wavelength avalanche photodetector

1983-08-22

1986-12-23

Sikes, William L.

357 13, 357 16, H01L 2714, H01L 3100

Patent

active

046315667

ABSTRACT:
High speed, high quantum efficiency, low dark current, and avalanche gain greater than 10 are exhibited by a long wavelength avalanche photodetector including in succession a terminal region of p-type indium phosphide (InP) a multiplication region comprising first and second layers of n-type indium phosphide (InP), a grading layer of n-type indium gallium arsenide phosphide (InGaAsP), and an absorption region of n-type indium gallium arsenide (InGaAs).

REFERENCES:
patent: 4110778 (1978-08-01), Eden et al.
patent: 4473835 (1984-09-01), Forrest et al.
Appl. Phys. Lett. 37(3), 1980, "In.sub.0.53 Ga.sub.0.47 . . . " by S. R. Forrest et al., pp. 322-325.
Appl. Phys. Lett. 35(3), Aug. 1979, "InGaAsP heterostructure . . . " by K. Nishida et al., pp. 251-253.
Appl. Phys. Lett. 39(5), Sep. 1981, "A high gain . . . " by O. K. Kim et al., pp. 402-404.
Appl. Phys. Lett. 41(1), Jul. 1982, "Optical response time . . . " by S. R. Forrest et al., pp. 95-98.
IEEE EDL, 1981, "New Type InGa/InP . . . " by Y. Matsushima et al., pp. 179-181.
Elec. Lett. 18(22), Oct. 28, 1982, "High-Speed-Response . . . " by Y. Matsushima et al., pp. 945-946.
Elec. Lett. 19(14), Jul. 7, 1983, "InGaAs Avalanche . . . " by T. Shirai et al., pp. 534-536.
Elec. Lett. 19(17), Aug. 18, 1983, "Incident Wavelength . . . " by K. Yasuda et al.
Press Release in Fiber Optics & Comm. Newsletter, Jul. 1983, Fujitsu Ltd.
Inst. Phys. Conf. Ser. No. 63, Chpt. 10, 1981, "LPE InGaAs/InP . . . " by A. G. Dentai et al., pp. 467-471.

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