Method for forming oxide isolation films on french sidewalls

Details Method for forming oxide isolation films on french sidewalls Method for forming oxide isolation films on french sidewalls

1987-10-28

1988-09-20

Lacey, David L.

Fishing, trapping, and vermin destroying

437 72, 437228, 437239, 148DIG117, 156643, 156649, H01L 21308, H01L 21316

Patent

active

047725699

ABSTRACT:
In a method according to the present invention for forming isolation oxide films (14) on a silicon substrate (11) having trenches and islands bounded by the trenches, the isolation oxide films are simultaneously formed in the island regions and in the side wall regions of the trenches by oxidizing the substrate (11) with a single patterned oxidation mask (12).

REFERENCES:
patent: 4361600 (1982-11-01), Brown
patent: 4549927 (1985-10-01), Goth et al.
patent: 4641416 (1987-02-01), Iranmanesh et al.
patent: 4666556 (1987-05-01), Fulton et al.
J. Vac. Sci. Technol., J. M. Morel et al., "High Resolution Steep Profile Resist Patterns", Nov./Dec. 1979, pp. 1620-1624.

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