Metal oxide semiconductor field-effect transistor with metal sou

Details Metal oxide semiconductor field-effect transistor with metal sou Metal oxide semiconductor field-effect transistor with metal sou

1984-03-08

1986-12-23

Clawson, Jr., Joseph E.

357 237, 357 41, 357 65, 357 86, H01L 2978

Patent

active

046315632

ABSTRACT:
A source region and a drain region are formed in a semiconductor layer, a thin insulating layer of SiO.sub.2 is formed on the semiconductor layer, and a gate electrode is formed thereover. Al metal forms ohmic contacts with the source and drain regions to provide a source electrode and a drain electrode, respectively. Al diffused in the drain region remains within the drain region, and the drain region and the substrate region form a p-n junction. Al diffused in the source region traverses the source region and reaches the substrate region to form an ohmic contact between the source region and the substrate region.

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