Silicon-on-insulator integrated circuits and method

Details Silicon-on-insulator integrated circuits and method Silicon-on-insulator integrated circuits and method

1987-05-22

1989-10-17

Hille, Rolf

357 53, 357 59, H01L 2308, H01L 2314, H01L 2310, H01L 2508

Patent

active

048750867

ABSTRACT:
Preferred embodiments include silicon-on-insulator structures (30) and integrated circuits include a thin single crystal silicon layer (32) on a silicon dioxide layer (34) which is on a polysilicon layer (36) bonded to a surface-oxidized silicon substrate (42) by a glass layer (38). Also, single crystal silicon layers on oxide on polysilicon substrates and methods of fabrication are included in the preferred embodiments.

REFERENCES:
patent: 4017341 (1977-04-01), Suzuki et al.
patent: 4344985 (1982-08-01), Goodman et al.

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