Metal-insulator-semiconductor capacitor formed on silicon carbid

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 14, 357 61, H01L 2924, H01L 2993, H01L 2994

Patent

active

048750832

ABSTRACT:
The invention comprises a metal-oxide-semiconductor (MOS) capacitor formed on silicon carbide. By utilizing new techniques for obtaining single crystals and monocrystalline thin films of silicon carbide, and by positioning the ohmic contact and the metal contact on a common side of the silicon carbide semiconductor portion, devices are obtained which are commercially viable and which demonstrate reduced series resistance, lesser leakage current and greater capacitance than have previous devices formed on silicon carbide.

REFERENCES:
patent: 2918396 (1959-12-01), Hall
patent: 2981877 (1961-04-01), Noya
patent: 3201666 (1965-08-01), Hall
patent: 3254280 (1966-05-01), Wallace
patent: 3402332 (1968-09-01), Thire
patent: 3497773 (1970-02-01), Kisinko et al.
Silicon Carbide Field-Effect and Bipolar Transistors: Muench et al.; pp. 337-339, IEEE IEDM, Tech. Digest, Dec. 1977.
Schottky-Barrier Field-Effect Transistors of 3C-SiC; S. Yoshida et al.; Appl. Phys., vol. 60, No. 8, 10-15-86, pp. 2989-2991.
.beta.-SiC MESFET's and Buried-Gate JFET's; Kelner et al.; IEEE Electron. Device Lett. EDL-8, #9, 1987, p. 428.
Temperature Dependence of the Current-Voltage Characteristics of Metal-Semiconductor Field-Effect Transistors in n--Type B-SiC Grown Via Chemical Vapor Deposition;
Kong et al.; Appl. Phys. Lett., vol. 51, No. 6, 8-10-87, pp. 442-444.
Bearse, Microwaves, vol. 15, No. 5, pp. 9 and 13, May, 1976.
Harris, Solid State Electronics, vol. 19, pp. 103-105, 1976.
Hamilton and Howard, Basic IC Engineering, McGraw-Hill, NT, 1925, pp. 13-16.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Metal-insulator-semiconductor capacitor formed on silicon carbid does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal-insulator-semiconductor capacitor formed on silicon carbid, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-insulator-semiconductor capacitor formed on silicon carbid will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1746424

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.