Patent
1987-10-26
1989-10-17
Larkins, William D.
357 14, 357 61, H01L 2924, H01L 2993, H01L 2994
Patent
active
048750832
ABSTRACT:
The invention comprises a metal-oxide-semiconductor (MOS) capacitor formed on silicon carbide. By utilizing new techniques for obtaining single crystals and monocrystalline thin films of silicon carbide, and by positioning the ohmic contact and the metal contact on a common side of the silicon carbide semiconductor portion, devices are obtained which are commercially viable and which demonstrate reduced series resistance, lesser leakage current and greater capacitance than have previous devices formed on silicon carbide.
REFERENCES:
patent: 2918396 (1959-12-01), Hall
patent: 2981877 (1961-04-01), Noya
patent: 3201666 (1965-08-01), Hall
patent: 3254280 (1966-05-01), Wallace
patent: 3402332 (1968-09-01), Thire
patent: 3497773 (1970-02-01), Kisinko et al.
Silicon Carbide Field-Effect and Bipolar Transistors: Muench et al.; pp. 337-339, IEEE IEDM, Tech. Digest, Dec. 1977.
Schottky-Barrier Field-Effect Transistors of 3C-SiC; S. Yoshida et al.; Appl. Phys., vol. 60, No. 8, 10-15-86, pp. 2989-2991.
.beta.-SiC MESFET's and Buried-Gate JFET's; Kelner et al.; IEEE Electron. Device Lett. EDL-8, #9, 1987, p. 428.
Temperature Dependence of the Current-Voltage Characteristics of Metal-Semiconductor Field-Effect Transistors in n--Type B-SiC Grown Via Chemical Vapor Deposition;
Kong et al.; Appl. Phys. Lett., vol. 51, No. 6, 8-10-87, pp. 442-444.
Bearse, Microwaves, vol. 15, No. 5, pp. 9 and 13, May, 1976.
Harris, Solid State Electronics, vol. 19, pp. 103-105, 1976.
Hamilton and Howard, Basic IC Engineering, McGraw-Hill, NT, 1925, pp. 13-16.
Larkins William D.
North Carolina State University
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