Schottky barrier photodiode structure

Details Schottky barrier photodiode structure Schottky barrier photodiode structure

1988-12-14

1989-10-17

James, Andrew J.

357 30, 357 52, H01L 2948, H01L 2714

Patent

active

048750824

ABSTRACT:
A Schottky barrier photodiode for detecting infrared radiation uses implantation of metal ions to form a metal silicide. An annular N+ type silicon guard ring is formed in a p-type silicon substrate. Metal ions are implanted into the exposed surface area of the silicon substrate surrounded by the silicon guard ring. The resulting structure is annealed to form a silicide of the implanted metal. A portion of the silicon substrate encircled by the silicon guard ring and above the metal silicide is removed. A thin oxide passivating layer is formed above the metal silicide.

REFERENCES:
patent: 4000134 (1986-09-01), Skolnik et al.
patent: 4058368 (1977-11-01), Suensson et al.
patent: 4533933 (1985-08-01), Pellegrini et al.
patent: 4548671 (1985-10-01), Kosonocky et al.
patent: 4586069 (1986-04-01), Koniger et al.

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